Type Designator: J111
J111/A, J112/A, J113/A N-Channel JFET Features.InterFET N0132S Geometry.Low Noise: 1.2 nV/√Hz Typical.High Gain: 15mS Typical.RoHS Compliant.SMT, TH, and Bare Die Package options. Applications.Choppers.Commutators.Analog Switches Description The -25V InterFET J111/A, J112/A, and J113/A JFET’s are targeted for high. J111, J112 4 r ds(on), DRAIN−SOURCE ON−STATE RESISTANCE (OHMS) NOTE 2 The Zero−Gate−Voltage Drain Current (I DSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate−Source Off Voltage (V GS(off) and Drain−Source On Resistance (r ds(on) ) to I DSS. J111 JFET N-Channel Transistor TO-92 JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser. Sailboat and sailing yacht searchable database with more than 8,000 sailboats from around the world including sailboat photos and drawings. About the J/111 sailboat.
Type of Transistor: JFET Ibm trusteer rapport download for mac.
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.4 W
Maximum Drain-Source Voltage |Vds|: 35 V Firefox focus for android.
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 3 pF
Maximum Drain-Source On-State Resistance (Rds): 30 Ohm
Package: TO92
J111 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J111 Datasheet (PDF)
0.1. j111 j112 j113 cnv.pdf Size:31K _philips
DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp
0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
0.4. ssm3j111tu.pdf Size:255K _toshiba
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol
0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi
August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Free web scraping tools. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark
J111 For Sale
0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi
J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D
Transistor Fet J111
0.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay
J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111
0.8. j111 j112.pdf Size:85K _onsemi
J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300
Datasheet: IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, IRF3710, J112, J113, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292.
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J111 Fet Datasheet
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